In general, an electron will rattle around in a conductor at the Fermi velocity randomly.
An applied electric field will give this random motion a small net velocity in one direction.
In a semiconductor, the two main carrier scattering mechanisms are ionized impurity scattering and lattice scattering.
Because current is proportional to drift velocity, which is, in turn, proportional to the magnitude of an external electric field, Ohm's law can be explained in terms of drift velocity.
Drift velocity is expressed in the following equations:
where Jdrift is the current density, σ is charge density in units C/m3, and vavg is the average velocity of the carriers (drift velocity);
where μ is the electron mobility in (m/s)/(V/m) and E is the electric field in V/m.
Derivation
To find an equation for drift velocity, one can begin with the definition of current:
One can relate ΔQ to the motion of charged particles in a wire expecting a dependence on the number density of the charge carriers and using dimensional analysis:
-
ΔQ
- n is the number of charge carriers per unit volume
- A is the cross sectional area
- Δx is a small length along the wire
- q is the charge of the charge carriers
- Alternative Derivation
As a numerical example,for a copper wire of 1 square mm area, carrying a current of 3 amperes, the drift velocity of electrons would be about 0.00028 metres per second (or just about an hour to travel one metre).
Fuente: http://en.wikipedia.org/wiki/Drift_velocity
Nombre: Rodriguez B. Joiver I.
Asignatura: CRF
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